Ferroelectric and resistive-switching materials are attracting substantial interest for emerging information technologies because they can enable nonvolatile data storage, low-power memory, and brain-inspired computing. Ferroelectric materials offer electrically switchable polarization, while resistive-switching materials exhibit controllable changes in electrical resistance. These properties provide routes toward memory and computing architectures that combine data storage with processing. Despite significant progress, important challenges remain in understanding switching mechanisms, improving device uniformity and endurance, reducing operating voltage, controlling variability, and establishing reliable relationships between material structure, interfaces, and device performance.

The primary goal of this Special Issue is to bring together recent advances in the design, synthesis, characterization, modelling, and device integration of ferroelectric and resistive-switching materials for next-generation nonvolatile memory and neuromorphic computing. Contributions may address fundamental physical mechanisms as well as materials engineering and application-oriented demonstrations. Interdisciplinary studies connecting materials science, applied physics, electronics, and computational approaches are particularly welcome.

The Special Issue welcomes original research articles and comprehensive review articles, as well as relevant methods-focused studies. Submissions should present technically sound work, clearly explain the novelty and significance of the results, and provide evidence appropriate to the claims made. Through this collection, we aim to highlight advances in materials and device concepts, identify outstanding scientific and engineering challenges, and encourage collaboration across disciplines working toward energy-efficient memory and neuromorphic technologies.